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1. product pro?le 1.1 general description pnp/pnp matched double transistors in small surface-mounted device (smd) plastic packages. the transistors are fully isolated internally. 1.2 features n current gain matching n base-emitter voltage matching n drop-in replacement for standard double transistors 1.3 applications n current mirror n differential ampli?er 1.4 quick reference data bcm857bv; bcm857bs; BCM857DS pnp/pnp matched double transistors rev. 06 28 august 2009 product data sheet table 1. product overview type number package npn/npn complement matched version of nxp jeita bcm857bv sot666 - bcm847bv bc857bv bcm857bs sot363 sc-88 bcm847bs bc857bs BCM857DS sot457 sc-74 bcm847ds - table 2. quick reference data symbol parameter conditions min typ max unit per transistor v ceo collector-emitter voltage open base - - - 45 v i c collector current - - - 100 ma h fe dc current gain v ce = - 5v; i c = - 2ma 200 290 450
bcm857bv_bs_ds_6 ? nxp b.v. 2009. all rights reserved. product data sheet rev. 06 28 august 2009 2 of 15 nxp semiconductors bcm857bv/bs/ds pnp/pnp matched double transistors [1] the smaller of the two values is taken as the numerator. [2] the smaller of the two values is subtracted from the larger value. 2. pinning information 3. ordering information 4. marking [1] * = -: made in hong kong * = p: made in hong kong * = t: made in malaysia * = w: made in china per device h fe1 /h fe2 h fe matching v ce = - 5v; i c = - 2ma [1] 0.9 1 - v be1 - v be2 v be matching v ce = - 5v; i c = - 2ma [2] --2mv table 2. quick reference data continued symbol parameter conditions min typ max unit table 3. pinning pin description simpli?ed outline symbol 1 emitter tr1 2 base tr1 3 collector tr2 4 emitter tr2 5 base tr2 6 collector tr1 001aab555 6 4 5 1 3 2 sym018 2 1 3 5 6 tr1 tr2 4 table 4. ordering information type number package name description version bcm857bv - plastic surface-mounted package; 6 leads sot666 bcm857bs sc-88 plastic surface-mounted package; 6 leads sot363 BCM857DS sc-74 plastic surface-mounted package (tsop6); 6 leads sot457 table 5. marking codes type number marking code [1] bcm857bv 3b bcm857bs a9* BCM857DS r8
bcm857bv_bs_ds_6 ? nxp b.v. 2009. all rights reserved. product data sheet rev. 06 28 august 2009 3 of 15 nxp semiconductors bcm857bv/bs/ds pnp/pnp matched double transistors 5. limiting values [1] device mounted on an fr4 printed-circuit board (pcb), single-sided copper, tin-plated and standard footprint. [2] re?ow soldering is the only recommended soldering method. 6. thermal characteristics table 6. limiting values in accordance with the absolute maximum rating system (iec 60134). symbol parameter conditions min max unit per transistor v cbo collector-base voltage open emitter - - 50 v v ceo collector-emitter voltage open base - - 45 v v ebo emitter-base voltage open collector - - 5v i c collector current - - 100 ma i cm peak collector current single pulse; t p 1ms - - 200 ma p tot total power dissipation t amb 25 c sot666 [1] [2] - 200 mw sot363 [1] - 200 mw sot457 [1] - 250 mw per device p tot total power dissipation t amb 25 c sot666 [1] [2] - 300 mw sot363 [1] - 300 mw sot457 [1] - 380 mw t j junction temperature - 150 c t amb ambient temperature - 65 +150 c t stg storage temperature - 65 +150 c table 7. thermal characteristics symbol parameter conditions min typ max unit per transistor r th(j-a) thermal resistance from junction to ambient in free air sot666 [1] [2] - - 625 k/w sot363 [1] - - 625 k/w sot457 [1] - - 500 k/w
bcm857bv_bs_ds_6 ? nxp b.v. 2009. all rights reserved. product data sheet rev. 06 28 august 2009 4 of 15 nxp semiconductors bcm857bv/bs/ds pnp/pnp matched double transistors [1] device mounted on an fr4 pcb, single-sided copper, tin-plated and standard footprint. [2] re?ow soldering is the only recommended soldering method. 7. characteristics per device r th(j-a) thermal resistance from junction to ambient in free air sot666 [1] [2] - - 416 k/w sot363 [1] - - 416 k/w sot457 [1] - - 328 k/w table 7. thermal characteristics continued symbol parameter conditions min typ max unit table 8. characteristics t amb =25 c unless otherwise speci?ed symbol parameter conditions min typ max unit per transistor i cbo collector-base cut-off current v cb = - 30 v; i e =0a -- - 15 na v cb = - 30 v; i e =0a; t j = 150 c -- - 5 m a i ebo emitter-base cut-off current v eb = - 5v; i c =0a -- - 100 na h fe dc current gain v ce = - 5v; i c = - 10 m a - 250 - v ce = - 5v; i c = - 2ma 200 290 450 v cesat collector-emitter saturation voltage i c = - 10 ma; i b = - 0.5 ma - - 50 - 200 mv i c = - 100 ma; i b = - 5ma - - 200 - 400 mv v besat base-emitter saturation voltage i c = - 10 ma; i b = - 0.5 ma [1] - - 760 - mv i c = - 100 ma; i b = - 5ma [1] - - 920 - mv v be base-emitter voltage v ce = - 5v; i c = - 2ma [2] - 600 - 650 - 700 mv v ce = - 5v; i c = - 10 ma [2] -- - 760 mv c c collector capacitance v cb = - 10 v; i e =i e =0a; f=1mhz - - 2.2 pf c e emitter capacitance v eb = - 0.5 v; i c =i c =0a; f=1mhz -10-pf
bcm857bv_bs_ds_6 ? nxp b.v. 2009. all rights reserved. product data sheet rev. 06 28 august 2009 5 of 15 nxp semiconductors bcm857bv/bs/ds pnp/pnp matched double transistors [1] v besat decreases by about 1.7 mv/k with increasing temperature. [2] v be decreases by about 2 mv/k with increasing temperature. [3] the smaller of the two values is taken as the numerator. [4] the smaller of the two values is subtracted from the larger value. f t transition frequency v ce = - 5v; i c = - 10 ma; f = 100 mhz 100 175 - mhz nf noise ?gure v ce = - 5v; i c = - 0.2 ma; r s =2k w ; f = 10 hz to 15.7 khz - 1.6 - db v ce = - 5v; i c = - 0.2 ma; r s =2k w ; f = 1 khz; b = 200 hz - 3.1 - db per device h fe1 /h fe2 h fe matching v ce = - 5v; i c = - 2ma [3] 0.9 1 - v be1 - v be2 v be matching v ce = - 5v; i c = - 2ma [4] --2mv table 8. characteristics continued t amb =25 c unless otherwise speci?ed symbol parameter conditions min typ max unit
bcm857bv_bs_ds_6 ? nxp b.v. 2009. all rights reserved. product data sheet rev. 06 28 august 2009 6 of 15 nxp semiconductors bcm857bv/bs/ds pnp/pnp matched double transistors t amb =25 cv ce = - 5v (1) t amb = 100 c (2) t amb =25 c (3) t amb = - 55 c fig 1. collector current as a function of collector-emitter voltage; typical values fig 2. dc current gain as a function of collector current; typical values i c /i b =20 (1) t amb = - 55 c (2) t amb =25 c (3) t amb = 100 c i c /i b =20 (1) t amb = 100 c (2) t amb =25 c (3) t amb = - 55 c fig 3. base-emitter saturation voltage as a function of collector current; typical values fig 4. collector-emitter saturation voltage as a function of collector current; typical values 006aaa540 v ce (v) 0 - 10 - 8 - 4 - 6 - 2 - 0.08 - 0.12 - 0.04 - 0.16 - 0.20 i c (a) 0 - 0.25 i b (ma) = - 2.5 - 0.5 - 0.75 - 1.0 - 1.25 - 1.5 - 1.75 - 2.0 - 2.25 006aaa541 200 400 600 h fe 0 i c (ma) - 10 - 2 - 10 3 - 10 2 - 10 - 1 - 10 - 1 (1) (2) (3) 006aaa542 i c (ma) - 10 - 1 - 10 3 - 10 2 - 1 - 10 - 0.5 - 0.9 - 1.3 - 0.3 - 0.7 - 1.1 v besat (v) - 0.1 (1) (2) (3) 006aaa543 - 1 - 10 - 1 - 10 v cesat (v) - 10 - 2 i c (ma) - 10 - 1 - 10 3 - 10 2 - 1 - 10 (1) (2) (3)
bcm857bv_bs_ds_6 ? nxp b.v. 2009. all rights reserved. product data sheet rev. 06 28 august 2009 7 of 15 nxp semiconductors bcm857bv/bs/ds pnp/pnp matched double transistors v ce = - 5 v; t amb =25 cv ce = - 5 v; t amb =25 c fig 5. base-emitter voltage as a function of collector current; typical values fig 6. transition frequency as a function of collector current; typical values f = 1 mhz; t amb =25 c f = 1 mhz; t amb =25 c fig 7. collector capacitance as a function of collector-base voltage; typical values fig 8. emitter capacitance as a function of emitter-base voltage; typical values 006aaa544 - 0.6 - 0.8 - 1 v be (v) - 0.4 i c (ma) - 10 - 1 - 10 3 - 10 2 - 1 - 10 i c (ma) - 1 - 10 2 - 10 006aaa545 10 2 10 3 f t (mhz) 10 v cb (v) 0 - 10 - 8 - 4 - 6 - 2 006aaa546 4 2 6 8 c c (pf) 0 006aaa547 v eb (v) 0 - 6 - 4 - 2 9 11 7 13 15 c e (pf) 5
bcm857bv_bs_ds_6 ? nxp b.v. 2009. all rights reserved. product data sheet rev. 06 28 august 2009 8 of 15 nxp semiconductors bcm857bv/bs/ds pnp/pnp matched double transistors 8. application information 9. package outline fig 9. current mirror fig 10. differential ampli?er 006aaa524 v cc l out r1 tr2 tr1 006aaa526 in2 in1 tr2 tr1 out2 v - v + out1 fig 11. package outline sot666 fig 12. package outline sot363 (sc-88) fig 13. package outline sot457 (sc-74) dimensions in mm 04-11-08 1.7 1.5 1.7 1.5 1.3 1.1 1 0.18 0.08 0.27 0.17 0.5 pin 1 index 123 4 5 6 0.6 0.5 0.3 0.1 06-03-16 dimensions in mm 0.25 0.10 0.3 0.2 pin 1 index 1.3 0.65 2.2 2.0 1.35 1.15 2.2 1.8 1.1 0.8 0.45 0.15 13 2 4 65 04-11-08 dimensions in mm 3.0 2.5 1.7 1.3 3.1 2.7 pin 1 index 1.9 0.26 0.10 0.40 0.25 0.95 1.1 0.9 0.6 0.2 13 2 4 5 6
bcm857bv_bs_ds_6 ? nxp b.v. 2009. all rights reserved. product data sheet rev. 06 28 august 2009 9 of 15 nxp semiconductors bcm857bv/bs/ds pnp/pnp matched double transistors 10. packing information [1] for further information and the availability of packing methods, see section 14 . [2] t1: normal taping [3] t2: reverse taping table 9. packing methods the indicated -xxx are the last three digits of the 12nc ordering code. [1] type number package description packing quantity 3000 4000 8000 10000 bcm857bv sot666 2 mm pitch, 8 mm tape and reel - - -315 - 4 mm pitch, 8 mm tape and reel - -115 - - bcm857bs sot363 4 mm pitch, 8 mm tape and reel; t1 [2] -115 - - -135 4 mm pitch, 8 mm tape and reel; t2 [3] -125 - - -165 BCM857DS sot457 4 mm pitch, 8 mm tape and reel; t1 [2] -115 - - -135 4 mm pitch, 8 mm tape and reel; t2 [3] -125 - - -165
bcm857bv_bs_ds_6 ? nxp b.v. 2009. all rights reserved. product data sheet rev. 06 28 august 2009 10 of 15 nxp semiconductors bcm857bv/bs/ds pnp/pnp matched double transistors 11. soldering re?ow soldering is the only recommended soldering method. fig 14. re?ow soldering footprint sot666 fig 15. re?ow soldering footprint sot363 (sc-88) solder lands placement area occupied area solder paste sot666_fr 2.75 2.45 2.1 1.6 0.4 (6 ) 0.55 (2 ) 0.25 (2 ) 0.6 (2 ) 0.65 (2 ) 0.3 (2 ) 0.325 (4 ) 0.45 (4 ) 0.5 (4 ) 0.375 (4 ) 1.7 2 1.7 1.075 0.538 dimensions in mm solder lands solder resist occupied area solder paste sot363_fr 2.65 2.35 0.4 (2 ) 0.6 (2 ) 0.5 (4 ) 0.5 (4 ) 0.6 (4 ) 0.6 (4 ) 1.5 1.8 dimensions in mm
bcm857bv_bs_ds_6 ? nxp b.v. 2009. all rights reserved. product data sheet rev. 06 28 august 2009 11 of 15 nxp semiconductors bcm857bv/bs/ds pnp/pnp matched double transistors fig 16. wave soldering footprint sot363 (sc-88) dimensions in mm fig 17. re?ow soldering footprint sot457 (sc-74) sot363_fw solder lands solder resist occupied area preferred transport direction during soldering 5.3 1.3 1.3 1.5 0.3 1.5 4.5 2.45 2.5 dimensions in mm solder lands solder resist occupied area solder paste 0.95 2.825 0.45 0.55 1.60 1.95 3.45 1.70 3.10 3.20 3.30 msc422
bcm857bv_bs_ds_6 ? nxp b.v. 2009. all rights reserved. product data sheet rev. 06 28 august 2009 12 of 15 nxp semiconductors bcm857bv/bs/ds pnp/pnp matched double transistors dimensions in mm fig 18. wave soldering footprint sot457 (sc-74) 1.40 4.30 5.30 0.45 msc423 1.45 4.45 5.05 solder lands solder resist occupied area
bcm857bv_bs_ds_6 ? nxp b.v. 2009. all rights reserved. product data sheet rev. 06 28 august 2009 13 of 15 nxp semiconductors bcm857bv/bs/ds pnp/pnp matched double transistors 12. revision history table 10. revision history document id release date data sheet status change notice supersedes bcm857bv_bs_ds_6 20090828 product data sheet - bcm857bv_bs_ds_5 modi?cations: ? this data sheet was changed to re?ect the new company name nxp semiconductors, including new legal de?nitions and disclaimers. no changes were made to the technical content. ? figure 12 p ac kage outline so t363 (sc-88) : updated ? figure 14 re? o w solder ing f ootpr int so t666 : updated ? figure 15 re? o w solder ing f ootpr int so t363 (sc-88) : updated ? figure 16 w a v e solder ing f ootpr int so t363 (sc-88) : updated ? figure 18 w a v e solder ing f ootpr int so t457 (sc-74) : updated bcm857bv_bs_ds_5 20060627 product data sheet - bcm857bs_ds_4 bcm857bs_ds_4 20060216 product data sheet - bcm857bs_ds_3 bcm857bs_ds_3 20060130 product data sheet - bcm857bs_2 bcm857bs_2 20050411 product data sheet - bcm857bs_1 bcm857bs_1 20040914 product data sheet - -
bcm857bv_bs_ds_6 ? nxp b.v. 2009. all rights reserved. product data sheet rev. 06 28 august 2009 14 of 15 nxp semiconductors bcm857bv/bs/ds pnp/pnp matched double transistors 13. legal information 13.1 data sheet status [1] please consult the most recently issued document before initiating or completing a design. [2] the term short data sheet is explained in section de?nitions. [3] the product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple dev ices. the latest product status information is available on the internet at url http://www .nxp .com . 13.2 de?nitions draft the document is a draft version only. the content is still under internal review and subject to formal approval, which may result in modi?cations or additions. nxp semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. short data sheet a short data sheet is an extract from a full data sheet with the same product type number(s) and title. a short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. for detailed and full information see the relevant full data sheet, which is available on request via the local nxp semiconductors sales of?ce. in case of any inconsistency or con?ict with the short data sheet, the full data sheet shall prevail. 13.3 disclaimers general information in this document is believed to be accurate and reliable. however, nxp semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. right to make changes nxp semiconductors reserves the right to make changes to information published in this document, including without limitation speci?cations and product descriptions, at any time and without notice. this document supersedes and replaces all information supplied prior to the publication hereof. suitability for use nxp semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of an nxp semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. nxp semiconductors accepts no liability for inclusion and/or use of nxp semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customers own risk. applications applications that are described herein for any of these products are for illustrative purposes only. nxp semiconductors makes no representation or warranty that such applications will be suitable for the speci?ed use without further testing or modi?cation. limiting values stress above one or more limiting values (as de?ned in the absolute maximum ratings system of iec 60134) may cause permanent damage to the device. limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the characteristics sections of this document is not implied. exposure to limiting values for extended periods may affect device reliability. terms and conditions of sale nxp semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www .nxp .com/pro? le/ter ms , including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by nxp semiconductors. in case of any inconsistency or con?ict between information in this document and such terms and conditions, the latter will prevail. no offer to sell or license nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. export control this document as well as the item(s) described herein may be subject to export control regulations. export might require a prior authorization from national authorities. quick reference data the quick reference data is an extract of the product data given in the limiting values and characteristics sections of this document, and as such is not complete, exhaustive or legally binding. 13.4 trademarks notice: all referenced brands, product names, service names and trademarks are the property of their respective owners. 14. contact information for more information, please visit: http://www .nxp.com for sales of?ce addresses, please send an email to: salesad dresses@nxp.com document status [1] [2] product status [3] de?nition objective [short] data sheet development this document contains data from the objective speci?cation for product development. preliminary [short] data sheet quali?cation this document contains data from the preliminary speci?cation. product [short] data sheet production this document contains the product speci?cation.
nxp semiconductors bcm857bv/bs/ds pnp/pnp matched double transistors ? nxp b.v. 2009. all rights reserved. for more information, please visit: http://www.nxp.com for sales office addresses, please send an email to: salesaddresses@nxp.com date of release: 28 august 2009 document identifier: bcm857bv_bs_ds_6 please be aware that important notices concerning this document and the product(s) described herein, have been included in section legal information. 15. contents 1 product pro?le . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.1 general description. . . . . . . . . . . . . . . . . . . . . . 1 1.2 features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.3 applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.4 quick reference data. . . . . . . . . . . . . . . . . . . . . 1 2 pinning information . . . . . . . . . . . . . . . . . . . . . . 2 3 ordering information . . . . . . . . . . . . . . . . . . . . . 2 4 marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 5 limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3 6 thermal characteristics. . . . . . . . . . . . . . . . . . . 3 7 characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 4 8 application information. . . . . . . . . . . . . . . . . . . 8 9 package outline . . . . . . . . . . . . . . . . . . . . . . . . . 8 10 packing information. . . . . . . . . . . . . . . . . . . . . . 9 11 soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 12 revision history . . . . . . . . . . . . . . . . . . . . . . . . 13 13 legal information. . . . . . . . . . . . . . . . . . . . . . . 14 13.1 data sheet status . . . . . . . . . . . . . . . . . . . . . . 14 13.2 de?nitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 13.3 disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 13.4 trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 14 contact information. . . . . . . . . . . . . . . . . . . . . 14 15 contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15

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